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PD - 91312E
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80 0.80 ID -4.0A -4.0A
IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630
RAD-Hard HEXFET TECHNOLOGY
TM (R)
QPL Part Number JANSR2N7390 JANSF2N7390
International Rectifier's RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -4.0 -2.4 -16 25 0.2 20 171 -4.0 2.5 -27 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
g
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1
2/18/03
IRHF9230
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-200 -- -- -- -2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.80 0.92 -4.0 -- -25 -250 -100 100 45 10 25 30 30 75 65 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, I D = -2.4A VGS = -12V, ID = -4.0A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -4.0A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -4.0A VDS = -100V VDD = -100V, ID = -4.0A, VGS =-12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 190 45
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -4.0 -16 -5.0 400 1.6
Test Conditions
A
V nS C
Tj = 25C, IS = -4.0A, VGS = 0V Tj = 25C, IF = -4.0A, di/dt -100A/s VDD -100V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 5.0 175
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF9230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS=-160V, VGS =0V VGS = -12V, ID =-2.4A VGS = -12V, ID =-2.4A VGS = 0V, IS = -4.0A
Min -200 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 -25 0.8 0.8 -5.0
Min -200 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.8 0.8 -5.0
1. Part number IRHF9230 (JANSR2N7390) 2. Part number IRHF93230 (JANSF2N7390)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
LE T MeV/(mg/cm)) 28.0 36.8 Energy (MeV) 285 305 Range (m) @VGS=0V Cu Br 43.0 39.0 -200 -200 -200 -200 VDS(V) @VGS=5V @VGS=10V -200 -125 @VGS=15V @VGS=20V -200 -75 -- --
Ion
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF9230
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
-5.0V
-5.0V
1 1 10
20s PULSE WIDTH T = 25 C
J 100
1 1
20s PULSE WIDTH T = 150 C
J 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -4.0A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
10
1.5
TJ = 150 C
1.0
0.5
1 5.0
V DS = -50V 20s PULSE WIDTH 7.0 7.5 5.5 6.0 6.5 8.0
-VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
IRHF9230
2000
1600
-VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = -4.0A
16
VDS =-160V VDS =-100V VDS =-40V
C, Capacitance (pF)
1200
Ciss
12
800
8
400
C oss C rss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
40 50 30 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ISD , Reverse Drain Current (A)
10us
- ID , Drain Current (A)
10
10
TJ = 150 C
100us 1ms
1
1
TJ = 25 C V GS = 0 V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
10ms
0.1 0.5
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
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5
IRHF9230
Pre-Irradiation
4.0
VDS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
2.0
VGS Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
td(on) tr t d(off) tf
VGS 10%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. CaseTemperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
0.50 0.20 0.10 0.05 0.02 0.1 0.01
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01
P DM t1 t2 10
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
3.0
RG
V DD
Pre-Irradiation
IRHF9230
VDS
L
400
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
-2 0 V VGS
300
ID -1.8A -2.5A BOTTOM -4.0A TOP
tp
200
15V
Fig 12a. Unclamped Inductive Test Circuit
100
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHF9230
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25C, L=21.4mH Peak I L = -4.0A, VGS =-12V ISD -4.0A, di/dt -150A/s, VDD -200V, TJ 150C
Case Outline and Dimensions -- TO-205AF(Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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